Authors: O.Ye. Bieliaiev, P.I. Baranskyi, H.P. Haidar

Summary: The monograph examines the peculiarities of the effects, which occur in single crystals of silicon and germanium under the influence of nuclear irradiation, various regimes of heat treatment, uniaxial mechanical loads; regularities of defect formation processes and defect transformation kinetics as a result of irradiation and thermal annealing were revealed; the specificity of inter-defect and impurity-defect interaction due to the presence of background and doping impurities in the crystals in a wide range of concentrations was analyzed; the physical factors determining mobility anisotropy and thermal EMF anisotropy in multi-valley semiconductors have been established; the peculiarities of the thermoelectric properties of transmutationally doped silicon crystals were clarified; the physical justification of the formation processes of silicon surface-barrier structures is given.

Reading audience: For researchers and specialists in the field of radiation physics, solid state physics and semiconductor materials science.

ISBN 978-966-00-1801-3

Book project: Scientific book

Responsible institutions: V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine

Published: Kyiv

Other institutions: Institute for Nuclear Research of NAS of Ukraine

Size in pages: 320

Print run: 100