Authors: T.E. Rudenko, A.N. Nazarov, V.S. Lysenko

Summary: This book addresses physics and electrical characterization of nanoelectronic silicon-on-insulator (SOI) structures and devices. The principal advantages of SOI devices over buik-Si devices and the main areas of their application are considered. Particular attention is given to novel SOI-based structures for nano-scale field-effect transistors (FETs), namely: ultra-thin-body SOI FETs, nanowire multi-gate FETs, and junctionless nanowire FETs. The specific electrical properties of these nanotransistor structures and methods for determining their parameters are considered. The monograph includes research results of the world-famous scientists in the silicon-on-insulator field, but mostly it presents the results of scientific research by the authors of the monograph, published in leading international journals and recognized by the international scientific community. It should be noted that so far no monographs on physics and diagnostics of silicon-on-insulator devices have been published in Ukraine, although silicon-on-insulator is currently recognized as the most advanced and most promising technology for fabricating high-speed, low voltage integrated circuits and key electronic components for modem portable electronic devices such as laptops, mobile phones, smartphones, etc.

Reading audience: The monograph is intended for scientific and engineering workers specializing in the semiconductor electronics. It can also be useful for university teachers, students, and graduate students who are interested in the current state of micro- and nanoelectronics.

ISBN 978-966-00-1884-6

DOI: https://doi.org/10.15407/978-966-00-1884-6

Book project: Scientific book

Responsible institutions: V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine

Published: Kyiv

Size in pages: 263

Print run: 50