Authors: A.E. Belyaev, N.S. Boltovets, E.F. Venger et al.

Editors: A.E. Belyaev, R.V. Konakova

Summary: The monograph deals with the physical phenomena occuring in the metal–semiconductor junction layer and at microwave diode breakdown, as well as methodology of the catastrophe thejry when predicting failures for silicon diodes and transistors. The methods of measurements of the parameters of ohmic and barrier contacts, as well as degradation mechanisms in silicon microwave diodes related to the physico-chemical and structural properties of metal–semiconductor interfaces, quality of the initial semiconductor material and p-n junction perfection, are considered. The experimental data on the techniques of defect gettering in microwave diode structures, in particular, the low-temperature and non-heating gettering processes that improve the parameters of semiconductor devices, are presented.

ISBN 978-966-360-176-2

Series: Ukrainian scientific book in a foreign language

Print run: 300